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| Hauptseite > Publikationsdatenbank > Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction > print |
| Hauptseite > Publikationsdatenbank > Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction > print |
| 001 | 850196 | ||
| 005 | 20210129234524.0 | ||
| 024 | 7 | _ | |a 10.1038/srep28459 |2 doi |
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| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 000 |
| 100 | 1 | _ | |a Carvalho, Daniel |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction |
| 260 | _ | _ | |a London |c 2016 |b Nature Publishing Group |
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| 520 | _ | _ | |a The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system. |
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| 700 | 1 | _ | |a Morales, Francisco M. |0 P:(DE-HGF)0 |b 10 |
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