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| Home > Publications database > Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction > print |
| 001 | 850196 | ||
| 005 | 20210129234524.0 | ||
| 024 | 7 | _ | |a 10.1038/srep28459 |2 doi |
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| 037 | _ | _ | |a FZJ-2018-04270 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 000 |
| 100 | 1 | _ | |a Carvalho, Daniel |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction |
| 260 | _ | _ | |a London |c 2016 |b Nature Publishing Group |
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| 520 | _ | _ | |a The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system. |
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| 700 | 1 | _ | |a Müller-Caspary, Knut |0 P:(DE-Juel1)165314 |b 1 |
| 700 | 1 | _ | |a Schowalter, Marco |0 P:(DE-HGF)0 |b 2 |
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| 700 | 1 | _ | |a Rosenauer, Andreas |0 P:(DE-HGF)0 |b 5 |
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| 700 | 1 | _ | |a Redondo-Cubero, Andres |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Lorenz, Katharina |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Daudin, Bruno |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Morales, Francisco M. |0 P:(DE-HGF)0 |b 10 |
| 773 | _ | _ | |a 10.1038/srep28459 |0 PERI:(DE-600)2615211-3 |p 28459 |t Scientific reports |v 6 |y 2016 |x 2045-2322 |
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