%0 Journal Article
%A Nemšák, Slavomír
%A Gehlmann, Mathias
%A Kuo, Cheng-Tai
%A Lin, Shih-Chieh
%A Schlueter, Christoph
%A Mlynczak, Ewa
%A Lee, Tien-Lin
%A Plucinski, Lukasz
%A Ebert, Hubert
%A Di Marco, Igor
%A Minár, Ján
%A Schneider, Claus M.
%A Fadley, Charles S.
%T Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
%J Nature Communications
%V 9
%N 1
%@ 2041-1723
%C London
%I Nature Publishing Group
%M FZJ-2018-04525
%P 3306
%D 2018
%X The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:30120237
%U <Go to ISI:>//WOS:000441865700002
%R 10.1038/s41467-018-05823-z
%U https://juser.fz-juelich.de/record/850747