Journal Article

FZJ-2018-04525

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Nemšák, S. (Corresponding author)FZJ* ; Gehlmann, M. ; Kuo, C.-T. ; Lin, S.-C. ; Schlueter, C. ; Mlynczak, E.FZJ* ; Lee, T.-L. ; Plucinski, L.FZJ* ; Ebert, H. ; Di Marco, I. ; Minár, J. ; Schneider, C. M.FZJ* ; Fadley, C. S.

2018
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/22663  doi:10.1038/s41467-018-05823-z

Abstract: The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2018

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