TY  - JOUR
AU  - Nemšák, Slavomír
AU  - Gehlmann, Mathias
AU  - Kuo, Cheng-Tai
AU  - Lin, Shih-Chieh
AU  - Schlueter, Christoph
AU  - Mlynczak, Ewa
AU  - Lee, Tien-Lin
AU  - Plucinski, Lukasz
AU  - Ebert, Hubert
AU  - Di Marco, Igor
AU  - Minár, Ján
AU  - Schneider, Claus M.
AU  - Fadley, Charles S.
TI  - Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
JO  - Nature Communications
VL  - 9
IS  - 1
SN  - 2041-1723
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2018-04525
SP  - 3306
PY  - 2018
AB  - The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
LB  - PUB:(DE-HGF)16
C6  - pmid:30120237
UR  - <Go to ISI:>//WOS:000441865700002
DO  - DOI:10.1038/s41467-018-05823-z
UR  - https://juser.fz-juelich.de/record/850747
ER  -