% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Nemk:850747,
      author       = {Nemšák, Slavomír and Gehlmann, Mathias and Kuo,
                      Cheng-Tai and Lin, Shih-Chieh and Schlueter, Christoph and
                      Mlynczak, Ewa and Lee, Tien-Lin and Plucinski, Lukasz and
                      Ebert, Hubert and Di Marco, Igor and Minár, Ján and
                      Schneider, Claus M. and Fadley, Charles S.},
      title        = {{E}lement- and momentum-resolved electronic structure of
                      the dilute magnetic semiconductor manganese doped gallium
                      arsenide},
      journal      = {Nature Communications},
      volume       = {9},
      number       = {1},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2018-04525},
      pages        = {3306},
      year         = {2018},
      abstract     = {The dilute magnetic semiconductors have promise in
                      spin-based electronics applications due to their potential
                      for ferromagnetic order at room temperature, and various
                      unique switching and spin-dependent conductivity properties.
                      However, the precise mechanism by which the transition-metal
                      doping produces ferromagnetism has been controversial. Here
                      we have studied a dilute magnetic semiconductor $(5\%$
                      manganese-doped gallium arsenide) with Bragg-reflection
                      standing-wave hard X-ray angle-resolved photoemission
                      spectroscopy, and resolved its electronic structure into
                      element- and momentum- resolved components. The measured
                      valence band intensities have been projected into
                      element-resolved components using analogous energy scans of
                      Ga 3d, Mn 2p, and As 3d core levels, with results in
                      excellent agreement with element-projected Bloch spectral
                      functions and clarification of the electronic structure of
                      this prototypical material. This technique should be broadly
                      applicable to other multi-element materials.},
      cin          = {PGI-6},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30120237},
      UT           = {WOS:000441865700002},
      doi          = {10.1038/s41467-018-05823-z},
      url          = {https://juser.fz-juelich.de/record/850747},
}