%0 Journal Article
%A Ledentsov, N. N.
%A Shchukin, V. A.
%A Shernyakov, Yu. M.
%A Kulagina, M. M.
%A Payusov, A. S.
%A Gordeev, N. Yu.
%A Maximov, M. V.
%A Zhukov, A. E.
%A Denneulin, T.
%A Cherkashin, N.
%T Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
%J Optics express
%V 26
%N 11
%@ 1094-4087
%C Washington, DC
%I Soc.
%M FZJ-2018-04719
%P 13985-13994
%D 2018
%X We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:29877443
%U <Go to ISI:>//WOS:000433333700026
%R 10.1364/OE.26.013985
%U https://juser.fz-juelich.de/record/851000