Journal Article

FZJ-2018-04719

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

Ledentsov, N. N. (Corresponding author) ; Shchukin, V. A. ; Shernyakov, Y. M. ; Kulagina, M. M. ; Payusov, A. S. ; Gordeev, N. Y. ; Maximov, M. V. ; Zhukov, A. E. ; Denneulin, T.FZJ* ; Cherkashin, N.

2018
Soc. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/19570  doi:10.1364/OE.26.013985

Abstract: We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2018

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; Free to read ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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