TY  - JOUR
AU  - Ledentsov, N. N.
AU  - Shchukin, V. A.
AU  - Shernyakov, Yu. M.
AU  - Kulagina, M. M.
AU  - Payusov, A. S.
AU  - Gordeev, N. Yu.
AU  - Maximov, M. V.
AU  - Zhukov, A. E.
AU  - Denneulin, T.
AU  - Cherkashin, N.
TI  - Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
JO  - Optics express
VL  - 26
IS  - 11
SN  - 1094-4087
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2018-04719
SP  - 13985-13994
PY  - 2018
AB  - We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
LB  - PUB:(DE-HGF)16
C6  - pmid:29877443
UR  - <Go to ISI:>//WOS:000433333700026
DO  - DOI:10.1364/OE.26.013985
UR  - https://juser.fz-juelich.de/record/851000
ER  -