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| Home > Publications database > Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates > print |
| 001 | 851000 | ||
| 005 | 20240610121333.0 | ||
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| 100 | 1 | _ | |a Ledentsov, N. N. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates |
| 260 | _ | _ | |a Washington, DC |c 2018 |b Soc. |
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| 520 | _ | _ | |a We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature. |
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| 700 | 1 | _ | |a Shchukin, V. A. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Shernyakov, Yu. M. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Kulagina, M. M. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Payusov, A. S. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Gordeev, N. Yu. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Maximov, M. V. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Zhukov, A. E. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Denneulin, T. |0 P:(DE-Juel1)172928 |b 8 |
| 700 | 1 | _ | |a Cherkashin, N. |0 0000-0002-0322-0864 |b 9 |
| 773 | _ | _ | |a 10.1364/OE.26.013985 |g Vol. 26, no. 11, p. 13985 - |0 PERI:(DE-600)1491859-6 |n 11 |p 13985-13994 |t Optics express |v 26 |y 2018 |x 1094-4087 |
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