000851089 001__ 851089
000851089 005__ 20210129234730.0
000851089 0247_ $$2doi$$a10.1063/1.5036728
000851089 0247_ $$2Handle$$a2128/19603
000851089 0247_ $$2WOS$$aWOS:000440603600010
000851089 037__ $$aFZJ-2018-04797
000851089 082__ $$a620
000851089 1001_ $$0P:(DE-HGF)0$$aZaumseil, P.$$b0
000851089 245__ $$aThe thermal stability of epitaxial GeSn layers
000851089 260__ $$aMelville, NY$$bAIP Publ.$$c2018
000851089 3367_ $$2DRIVER$$aarticle
000851089 3367_ $$2DataCite$$aOutput Types/Journal article
000851089 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1534398847_18911
000851089 3367_ $$2BibTeX$$aARTICLE
000851089 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000851089 3367_ $$00$$2EndNote$$aJournal Article
000851089 520__ $$aWe report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.
000851089 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000851089 588__ $$aDataset connected to CrossRef
000851089 7001_ $$0P:(DE-HGF)0$$aHou, Y.$$b1
000851089 7001_ $$0P:(DE-HGF)0$$aSchubert, M. A.$$b2
000851089 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b3
000851089 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b4$$ufzj
000851089 7001_ $$0P:(DE-Juel1)166341$$aRainko, D.$$b5$$ufzj
000851089 7001_ $$0P:(DE-HGF)0$$aVirgilio, M.$$b6
000851089 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b7$$ufzj
000851089 7001_ $$0P:(DE-HGF)0$$aCapellini, G.$$b8$$eCorresponding author
000851089 773__ $$0PERI:(DE-600)2722985-3$$a10.1063/1.5036728$$gVol. 6, no. 7, p. 076108 -$$n7$$p076108$$tAPL materials$$v6$$x2166-532X$$y2018
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.pdf$$yOpenAccess
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.gif?subformat=icon$$xicon$$yOpenAccess
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000851089 8564_ $$uhttps://juser.fz-juelich.de/record/851089/files/1.5036728.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000851089 909CO $$ooai:juser.fz-juelich.de:851089$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000851089 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b3$$kFZJ
000851089 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161180$$aForschungszentrum Jülich$$b4$$kFZJ
000851089 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)166341$$aForschungszentrum Jülich$$b5$$kFZJ
000851089 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b7$$kFZJ
000851089 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000851089 9141_ $$y2018
000851089 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000851089 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000851089 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000851089 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bAPL MATER : 2015
000851089 915__ $$0StatID:(DE-HGF)0501$$2StatID$$aDBCoverage$$bDOAJ Seal
000851089 915__ $$0StatID:(DE-HGF)0500$$2StatID$$aDBCoverage$$bDOAJ
000851089 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000851089 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000851089 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000851089 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000851089 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000851089 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000851089 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000851089 920__ $$lyes
000851089 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000851089 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000851089 980__ $$ajournal
000851089 980__ $$aVDB
000851089 980__ $$aUNRESTRICTED
000851089 980__ $$aI:(DE-Juel1)PGI-9-20110106
000851089 980__ $$aI:(DE-82)080009_20140620
000851089 9801_ $$aFullTexts