Journal Article

FZJ-2018-04797

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The thermal stability of epitaxial GeSn layers

Zaumseil, P. ; Hou, Y. ; Schubert, M. A. ; von den Driesch, N.FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Virgilio, M. ; Buca, D.FZJ* ; Capellini, G. (Corresponding author)

2018
AIP Publ. Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/19603  doi:10.1063/1.5036728

Abstract: We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; ; ; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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