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@ARTICLE{Hardtdegen:851648,
      author       = {Hardtdegen, Alexander and La Torre, Camilla and Cuppers,
                      Felix and Menzel, Stephan and Waser, R. and Hoffmann-Eifert,
                      Susanne},
      title        = {{I}mproved {S}witching {S}tability and the {E}ffect of an
                      {I}nternal {S}eries {R}esistor in {H}f{O} 2 /{T}i{O} x
                      {B}ilayer {R}e{RAM} {C}ells},
      journal      = {IEEE transactions on electron devices},
      volume       = {65},
      number       = {8},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-05198},
      pages        = {3229 - 3236},
      year         = {2018},
      abstract     = {Bipolar redox-based resistive random-access memory cells
                      are intensively studied for new storage class memory and
                      beyond von Neumann computing applications. However, the
                      considerable variability of the resistance values in ON and
                      OFF state as well as of the SET voltage remains challenging.
                      In this paper, we discuss the physical origin of the
                      significant reduction in the switching variability of HfO 2
                      -based devices achieved by the insertion of a thin TiOx
                      layer between the HfO 2 layer and the oxygen exchange metal
                      layer. Typically, HfO 2 single layer cells exhibit an abrupt
                      SET process, which is difficult to control. In contrast,
                      self-compliance effects in the HfO 2 /TiO x bilayer devices
                      lead to an increased stability of SET voltages and OFF-state
                      resistances. The SET process is gradual and the RESET
                      becomes abrupt for higher switching currents. Comparison of
                      the experimental data with simulation results achieved from
                      a physics-based compact model for the full description of
                      the switching behavior of the single layer and bilayer
                      devices clearly reveal three major effects. The TiO x layer
                      affects the temperature distribution during switching (by
                      modifying the heat dissipation), forms an additional series
                      resistance and changes the current conduction mechanism in
                      the OFF state of the bilayer device compared to the single
                      layer device.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000439649900021},
      doi          = {10.1109/TED.2018.2849872},
      url          = {https://juser.fz-juelich.de/record/851648},
}