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@ARTICLE{Loo:856521,
      author       = {Loo, Roger and Shimura, Yosuke and Ike, Shinichi and Vohra,
                      Anurag and Stoica, Toma and Stange, Daniela and Buca, Dan
                      Mihai and Kohen, David and Margetis, Joe and Tolle, John},
      title        = {{E}pitaxial {G}e{S}n: impact of process conditions on
                      material quality},
      journal      = {Semiconductor science and technology},
      volume       = {33},
      number       = {11},
      issn         = {0268-1242},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2018-05908},
      pages        = {114010},
      year         = {2018},
      abstract     = {The electrical and optical material properties of epitaxial
                      Ge1−xSnx and SiyGe1−x−ySnx are of high interest for
                      novel device applications. However, the limited Sn
                      solubility in Ge makes the epitaxial growth of Ge1−xSnx
                      and SiyGe1−x−ySnx challenging. Most of the literature
                      describing the epitaxial growth is for Ge2H6 and SnCl4 as Ge
                      and Sn precursors, respectively. A more recent publication
                      deals with the epitaxial growth of high-quality Ge1−xSnx
                      with the more conventional GeH4. In this manuscript, we
                      compare the structural and optical material quality of
                      Ge1−xSnx, epitaxially grown on Ge virtual substrates as a
                      function of growth pressure, growth temperature, the choice
                      of the carrier gas (H2 or N2) and the choice of the Ge
                      precursor (GeH4 versus Ge2H6). The best material quality in
                      terms of surface morphology and photoluminescence
                      characteristics is obtained if GeH4 is used as a Ge
                      precursor. For Ge1−xSnx grown with Ge2H6 and at
                      atmospheric pressure, pyramidical defects can be seen and
                      there is a risk for uncontrolled local Sn agglomeration. The
                      pyramidical defects are not observed on Ge1−xSnx layers
                      grown at reduced pressure, but the highest achievable
                      substitutional Sn concentration is lower. No pyramidical
                      defects are found for Ge1−xSnx layers grown with GeH4 and
                      the issue of uncontrolled local Sn agglomeration does not
                      appear.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000448113100002},
      doi          = {10.1088/1361-6641/aae2f9},
      url          = {https://juser.fz-juelich.de/record/856521},
}