%0 Journal Article
%A Lüpke, Felix
%A Doležal, Jiří
%A Cherepanov, Vasily
%A Ošt’ádal, Ivan
%A Tautz, Frank Stefan
%A Voigtländer, Bert
%T Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy
%J Surface science
%V 681
%@ 0039-6028
%C Amsterdam
%I Elsevier
%M FZJ-2018-07197
%P 130 - 133
%D 2019
%X The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW)materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energyelectron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer(ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing thesubstrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopyof this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction andclusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature furtherto 920 K leads to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction. We find that this surface configurationhas an atomically flat structure with threefold symmetry.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000460496100020
%R 10.1016/j.susc.2018.11.016
%U https://juser.fz-juelich.de/record/858309