Home > Publications database > Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy |
Journal Article | FZJ-2018-07197 |
; ; ; ; ;
2019
Elsevier
Amsterdam
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Please use a persistent id in citations: http://hdl.handle.net/2128/20354 doi:10.1016/j.susc.2018.11.016
Abstract: The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW)materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energyelectron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer(ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing thesubstrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopyof this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction andclusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature furtherto 920 K leads to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction. We find that this surface configurationhas an atomically flat structure with threefold symmetry.
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