Journal Article FZJ-2018-07197

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Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy

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2019
Elsevier Amsterdam

Surface science 681, 130 - 133 () [10.1016/j.susc.2018.11.016]

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Abstract: The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW)materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energyelectron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer(ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing thesubstrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopyof this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction andclusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature furtherto 920 K leads to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction. We find that this surface configurationhas an atomically flat structure with threefold symmetry.

Classification:

Contributing Institute(s):
  1. Funktionale Nanostrukturen an Oberflächen (PGI-3)
Research Program(s):
  1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2019
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Medline ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2018-12-10, last modified 2021-01-29