TY  - JOUR
AU  - Lüpke, Felix
AU  - Doležal, Jiří
AU  - Cherepanov, Vasily
AU  - Ošt’ádal, Ivan
AU  - Tautz, Frank Stefan
AU  - Voigtländer, Bert
TI  - Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy
JO  - Surface science
VL  - 681
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - FZJ-2018-07197
SP  - 130 - 133
PY  - 2019
AB  - The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW)materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energyelectron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer(ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing thesubstrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopyof this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction andclusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature furtherto 920 K leads to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction. We find that this surface configurationhas an atomically flat structure with threefold symmetry.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000460496100020
DO  - DOI:10.1016/j.susc.2018.11.016
UR  - https://juser.fz-juelich.de/record/858309
ER  -