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@ARTICLE{Lpke:858309,
author = {Lüpke, Felix and Doležal, Jiří and Cherepanov, Vasily
and Ošt’ádal, Ivan and Tautz, Frank Stefan and
Voigtländer, Bert},
title = {{S}urface structures of tellurium on {S}i(111)–(7×7)
studied by low-energy electron diffraction and scanning
tunneling microscopy},
journal = {Surface science},
volume = {681},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {FZJ-2018-07197},
pages = {130 - 133},
year = {2019},
abstract = {The Te-covered Si(111) surface has received recent interest
as a template for the epitaxy of van der Waals
(vdW)materials, e.g. Bi2Te3. Here, we report the formation
of a Te buffer layer on Si(111)–(7×7) by
low-energyelectron diffraction (LEED) and scanning tunneling
microscopy (STM). While deposition of several monolayer(ML)
of Te on the Si(111)–(7×7) surface at room temperature
results in an amorphous Te layer, increasing thesubstrate
temperature to 770 K results in a weak (7×7) electron
diffraction pattern. Scanning tunneling microscopyof this
surface shows remaining corner holes from the
Si(111)–(7×7) surface reconstruction andclusters in the
faulted and unfaulted halves of the (7×7) unit cells.
Increasing the substrate temperature furtherto 920 K leads
to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction.
We find that this surface configurationhas an atomically
flat structure with threefold symmetry.},
cin = {PGI-3},
ddc = {530},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000460496100020},
doi = {10.1016/j.susc.2018.11.016},
url = {https://juser.fz-juelich.de/record/858309},
}