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| Hauptseite > Publikationsdatenbank > Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy > print |
| Hauptseite > Publikationsdatenbank > Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy > print |
| 001 | 858309 | ||
| 005 | 20210129235919.0 | ||
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| 100 | 1 | _ | |a Lüpke, Felix |0 P:(DE-Juel1)162163 |b 0 |
| 245 | _ | _ | |a Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy |
| 260 | _ | _ | |a Amsterdam |c 2019 |b Elsevier |
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| 520 | _ | _ | |a The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW)materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energyelectron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer(ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing thesubstrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopyof this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction andclusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature furtherto 920 K leads to a Te/Si(111)–(2 3 × 2 3 )R30° surface reconstruction. We find that this surface configurationhas an atomically flat structure with threefold symmetry. |
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| 700 | 1 | _ | |a Voigtländer, Bert |0 P:(DE-Juel1)128794 |b 5 |e Corresponding author |
| 773 | _ | _ | |a 10.1016/j.susc.2018.11.016 |g Vol. 681, p. 130 - 133 |0 PERI:(DE-600)1479030-0 |p 130 - 133 |t Surface science |v 681 |y 2019 |x 0039-6028 |
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