%0 Journal Article
%A Narimani, Keyvan
%A Trellenkamp, Stefan
%A Tiedemann, Andreas
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
%J Applied Sciences
%V 8
%N 5
%@ 2076-3417
%C Basel
%I MDPI
%M FZJ-2019-00011
%P 670 -
%D 2018
%X In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000437326800017
%R 10.3390/app8050670
%U https://juser.fz-juelich.de/record/859060