Journal Article

FZJ-2019-00011

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Narimani, K.FZJ* ; Trellenkamp, S.FZJ* ; Tiedemann, A.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2018
MDPI Basel

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Please use a persistent id in citations: http://hdl.handle.net/2128/21156  doi:10.3390/app8050670

Abstract: In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; ; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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