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000859060 1001_ $$0P:(DE-Juel1)164261$$aNarimani, Keyvan$$b0$$ufzj
000859060 245__ $$aStrained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
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000859060 520__ $$aIn this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance
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000859060 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b1$$ufzj
000859060 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b2$$ufzj
000859060 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b3$$ufzj
000859060 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b4$$eCorresponding author
000859060 773__ $$0PERI:(DE-600)2704225-X$$a10.3390/app8050670$$gVol. 8, no. 5, p. 670 -$$n5$$p670 -$$tApplied Sciences$$v8$$x2076-3417$$y2018
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