TY  - JOUR
AU  - Narimani, Keyvan
AU  - Trellenkamp, Stefan
AU  - Tiedemann, Andreas
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
JO  - Applied Sciences
VL  - 8
IS  - 5
SN  - 2076-3417
CY  - Basel
PB  - MDPI
M1  - FZJ-2019-00011
SP  - 670 -
PY  - 2018
AB  - In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000437326800017
DO  - DOI:10.3390/app8050670
UR  - https://juser.fz-juelich.de/record/859060
ER  -