% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Narimani:859060,
      author       = {Narimani, Keyvan and Trellenkamp, Stefan and Tiedemann,
                      Andreas and Mantl, Siegfried and Zhao, Qing-Tai},
      title        = {{S}trained {S}ilicon {S}ingle {N}anowire
                      {G}ate-{A}ll-{A}round {TFET}s with {O}ptimized {T}unneling
                      {J}unctions},
      journal      = {Applied Sciences},
      volume       = {8},
      number       = {5},
      issn         = {2076-3417},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2019-00011},
      pages        = {670 -},
      year         = {2018},
      abstract     = {In this work, we demonstrate a strained Si single nanowire
                      tunnel field effect transistor (TFET) with gate-all-around
                      (GAA) structure yielding Ion-current of 15 μA/μm at the
                      supply voltage of Vdd = 0.5V with linear onset at low drain
                      voltages. The subthreshold swing (SS) at room temperature
                      shows an average of 76 mV/dec over 4 orders of drain current
                      Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized
                      devices also show excellent current saturation, an important
                      feature for analog performance},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000437326800017},
      doi          = {10.3390/app8050670},
      url          = {https://juser.fz-juelich.de/record/859060},
}