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@ARTICLE{Lin:859066,
author = {Lin, Jyi-Tsong and Wang, Tzu-Chi and Lee, Wei-Han and Yeh,
Chih-Ting and Glass, Stefan and Zhao, Qing-Tai},
title = {{C}haracteristics of {R}ecessed-{G}ate {TFET}s {W}ith
{L}ine {T}unneling},
journal = {IEEE transactions on electron devices},
volume = {65},
number = {2},
issn = {1557-9646},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2019-00017},
pages = {769 - 775},
year = {2018},
abstract = {In this paper, we propose a recessed-gate tunneling
field-effect transistor (TFET) to improve the on current of
TFETs by increasing the tunnel area with line tunneling. We
investigate the effects of the recessed-body thickness and
the doping level on the device performance. For optimal
device structures, our proposed n-TFET reaches 1.44 × 10 -6
A/μm of on current and 3.22 × 10 9 ON/OFF current ratio. A
minimum subthreshold swing SS min = 28.3 mV/dec and an
average swing SS avg = 59.8 mV/dec over seven orders of
drain current are achieved. In addition, complementary TFET
inverters show good noise margins of NM H = 65 mV (38.5 $\%$
V DD ) and NM L = 77 mV (32.5 $\%$ V DD ) and also a high
voltage gain even at V DD = 0.2 V.},
cin = {PGI-9},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000423124500058},
doi = {10.1109/TED.2017.2786215},
url = {https://juser.fz-juelich.de/record/859066},
}