% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Lin:859066, author = {Lin, Jyi-Tsong and Wang, Tzu-Chi and Lee, Wei-Han and Yeh, Chih-Ting and Glass, Stefan and Zhao, Qing-Tai}, title = {{C}haracteristics of {R}ecessed-{G}ate {TFET}s {W}ith {L}ine {T}unneling}, journal = {IEEE transactions on electron devices}, volume = {65}, number = {2}, issn = {1557-9646}, address = {New York, NY}, publisher = {IEEE}, reportid = {FZJ-2019-00017}, pages = {769 - 775}, year = {2018}, abstract = {In this paper, we propose a recessed-gate tunneling field-effect transistor (TFET) to improve the on current of TFETs by increasing the tunnel area with line tunneling. We investigate the effects of the recessed-body thickness and the doping level on the device performance. For optimal device structures, our proposed n-TFET reaches 1.44 × 10 -6 A/μm of on current and 3.22 × 10 9 ON/OFF current ratio. A minimum subthreshold swing SS min = 28.3 mV/dec and an average swing SS avg = 59.8 mV/dec over seven orders of drain current are achieved. In addition, complementary TFET inverters show good noise margins of NM H = 65 mV (38.5 $\%$ V DD ) and NM L = 77 mV (32.5 $\%$ V DD ) and also a high voltage gain even at V DD = 0.2 V.}, cin = {PGI-9}, ddc = {620}, cid = {I:(DE-Juel1)PGI-9-20110106}, pnm = {521 - Controlling Electron Charge-Based Phenomena (POF3-521)}, pid = {G:(DE-HGF)POF3-521}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000423124500058}, doi = {10.1109/TED.2017.2786215}, url = {https://juser.fz-juelich.de/record/859066}, }