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000859068 1001_ $$0P:(DE-Juel1)165997$$aGlass, S.$$b0$$eCorresponding author
000859068 1112_ $$a2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S)$$cBerkeley$$d2017-10-19 - 2017-10-20$$wUSA
000859068 245__ $$aExamination of a new SiGe/Si heterostructure TFET concept based on vertical tunneling
000859068 260__ $$bIEEE$$c2017
000859068 29510 $$a2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S)
000859068 300__ $$a1-3
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000859068 520__ $$aThis paper presents a Tunneling Field Effect Transistor concept with a vertical SiGe/Si hetero tunneling junction utilizing a design which promotes line tunneling in a source-gate overlap region. By contrast, the influence of parasitic point tunneling is marginal in the structure, resulting in a sharp turn-on. We show that the growth of a suitable layer stack and manufacturing a device is perfectly feasible and provide first electrical measurements serving as a proof of concept. The route to enhancing the performance by scaling device dimensions and adjusting the channel doping is examined by means of TCAD simulations.
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000859068 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b1
000859068 7001_ $$0P:(DE-Juel1)169107$$aKibkalo, L.$$b2$$ufzj
000859068 7001_ $$0P:(DE-Juel1)138352$$aBreuer, U.$$b3
000859068 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b4
000859068 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b5$$ufzj
000859068 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b6$$ufzj
000859068 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b7$$ufzj
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000859068 9141_ $$y2018
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