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@INPROCEEDINGS{Glass:859068,
      author       = {Glass, S. and Schulte-Braucks, C. and Kibkalo, L. and
                      Breuer, U. and Hartmann, J. M. and Buca, D. and Mantl, S.
                      and Zhao, Q. T.},
      title        = {{E}xamination of a new {S}i{G}e/{S}i heterostructure {TFET}
                      concept based on vertical tunneling},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00019},
      pages        = {1-3},
      year         = {2017},
      comment      = {2017 Fifth Berkeley Symposium on Energy Efficient
                      Electronic Systems $\&$ Steep Transistors Workshop (E3S)},
      booktitle     = {2017 Fifth Berkeley Symposium on
                       Energy Efficient Electronic Systems
                       $\&$ Steep Transistors Workshop (E3S)},
      abstract     = {This paper presents a Tunneling Field Effect Transistor
                      concept with a vertical SiGe/Si hetero tunneling junction
                      utilizing a design which promotes line tunneling in a
                      source-gate overlap region. By contrast, the influence of
                      parasitic point tunneling is marginal in the structure,
                      resulting in a sharp turn-on. We show that the growth of a
                      suitable layer stack and manufacturing a device is perfectly
                      feasible and provide first electrical measurements serving
                      as a proof of concept. The route to enhancing the
                      performance by scaling device dimensions and adjusting the
                      channel doping is examined by means of TCAD simulations.},
      month         = {Oct},
      date          = {2017-10-19},
      organization  = {2017 Fifth Berkeley Symposium on
                       Energy Efficient Electronic Systems
                       $\&$ Steep Transistors Workshop (E3S),
                       Berkeley (USA), 19 Oct 2017 - 20 Oct
                       2017},
      cin          = {PGI-9 / ZEA-3},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/E3S.2017.8246169},
      url          = {https://juser.fz-juelich.de/record/859068},
}