Contribution to a conference proceedings

FZJ-2019-00033

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Saeidi, A. (Corresponding author) ; Jazaeri, F. ; Stolichnov, I. ; Luong, G. V.FZJ* ; Zhao, Q. T. (Collaboration author)FZJ* ; Mantl, S.FZJ* ; Ionescu, A. M.

2017
IEEE

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Please use a persistent id in citations: doi:10.23919/SNW.2017.8242270

Abstract: This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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