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@INPROCEEDINGS{Horst:859084,
      author       = {Horst, Fabian and Graef, Michael and Hosenfeld, Fabian and
                      Farokhnejad, Atieh and Luong, Gia Vinh and Iniguez, Benjamin
                      and Kloes, Alexander},
      collaboration = {Zhao, Qing-Tai},
      title        = {{S}tatic noise margin analysis of 8{T} {TFET} {SRAM} cells
                      using a 2{D} compact model adapted to measurement data of
                      fabricated {TFET} devices},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00035},
      pages        = {1-4},
      year         = {2017},
      abstract     = {In this paper a static noise margin (SNM) analysis is done
                      for an 8T SRAM cell build up with complementary tunnel-FETs
                      (TFETs). The simulations are done with the help of a
                      Verilog-A implemented 2D DC compact model for a double-gate
                      (DG) TFET, published in [1]. The compact model is adapted to
                      measurement data of fabricated nanowire (NW) GAA TFETs
                      before analyzing the hold/read and write SNM of the 8T TFET
                      SRAM cell. The impact of the ambipolar behavior as well as
                      the unidirectional current of TFETs on the SRAM cell layout
                      and simulation are taken into account and analyzed in this
                      work. Furthermore, the impact of various supply voltages and
                      device widths of the access transistors on the resulting SNM
                      are investigated.},
      month         = {Apr},
      date          = {2017-04-03},
      organization  = {2017 Joint International EUROSOI
                       Workshop and International Conference
                       on Ultimate Integration on Silicon
                       (EUROSOI-ULIS), Athens (Greece), 3 Apr
                       2017 - 5 Apr 2017},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ULIS.2017.7962595},
      url          = {https://juser.fz-juelich.de/record/859084},
}