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000859085 0247_ $$2doi$$a10.1109/ULIS.2017.7962605
000859085 037__ $$aFZJ-2019-00036
000859085 1001_ $$0P:(DE-Juel1)164261$$aNarimani, K.$$b0$$eCorresponding author
000859085 1112_ $$a2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cAthens$$d2017-04-03 - 2017-04-05$$wGreece
000859085 245__ $$aSilicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents
000859085 260__ $$bIEEE$$c2017
000859085 300__ $$a1-4
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000859085 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1547563506_15236
000859085 520__ $$aIn this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. It is shown that the device achieves I on /I off ratio of 5×10 4 considering I on (V on = V Ioff -0.5V) = 0.8×10 -8 μA/μm and an average SS of 55mV/dec over two orders of magnitude of I d . Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency g m /I d beats the MOSFET performance at lower currents.
000859085 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000859085 588__ $$aDataset connected to CrossRef Conference
000859085 7001_ $$0P:(DE-HGF)0$$aGlass, S.$$b1
000859085 7001_ $$0P:(DE-HGF)0$$aRieger, T.$$b2
000859085 7001_ $$0P:(DE-Juel1)138772$$aBernardy, P.$$b3$$ufzj
000859085 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b4$$ufzj
000859085 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b5$$ufzj
000859085 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b6$$ufzj
000859085 773__ $$a10.1109/ULIS.2017.7962605
000859085 8564_ $$uhttps://juser.fz-juelich.de/record/859085/files/07962605.pdf$$yRestricted
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000859085 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164261$$aForschungszentrum Jülich$$b0$$kFZJ
000859085 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b1$$kFZJ
000859085 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b2$$kFZJ
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000859085 9141_ $$y2018
000859085 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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