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@INPROCEEDINGS{Narimani:859085,
author = {Narimani, K. and Glass, S. and Rieger, T. and Bernardy, P.
and von den Driesch, N. and Mantl, S. and Zhao, Q. T.},
title = {{S}ilicon tunnel {FET} with average subthreshold slope of
55m{V}/dec at low drain currents},
publisher = {IEEE},
reportid = {FZJ-2019-00036},
pages = {1-4},
year = {2017},
abstract = {In this paper we present a silicon tunnel FET based on
line-tunneling to achieve better subthreshold performance.
It is shown that the device achieves I on /I off ratio of
5×10 4 considering I on (V on = V Ioff -0.5V) = 0.8×10 -8
μA/μm and an average SS of 55mV/dec over two orders of
magnitude of I d . Furthermore, the analog figures of merit
have been calculated and show that the transconductance
efficiency g m /I d beats the MOSFET performance at lower
currents.},
month = {Apr},
date = {2017-04-03},
organization = {2017 Joint International EUROSOI
Workshop and International Conference
on Ultimate Integration on Silicon
(EUROSOI-ULIS), Athens (Greece), 3 Apr
2017 - 5 Apr 2017},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ULIS.2017.7962605},
url = {https://juser.fz-juelich.de/record/859085},
}