Contribution to a conference proceedings/Contribution to a book

FZJ-2019-00037

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Analog and RF analysis of gate all around silicon nanowire MOSFETs

Liu, L. ; Han, Q.FZJ* ; Makovejev, S. ; Trellenkamp, S.FZJ* ; Raskin, J.-P. ; Mantl, S.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2017
IEEE [Piscataway, NJ]
ISBN: 978-1-5090-5313-1 , 9781509053148 (print)

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Please use a persistent id in citations: doi:10.1109/ULIS.2017.7962575

Abstract: Gate all around (GAA) nanowire MOSFETs with gate length of 130 nm were fabricated on SOI wafers. The analog performance was analyzed in terms of transconductance, output conductance, voltage gain, Early voltage and transconductance efficiency. The RF characterization showed relatively low cutoff frequency and maximum oscillation frequency. Small-signal parameters are extracted using cold FET method combined with an optimization procedure called Artificial Bee Colony (ABC) method. It proves that large parasitic capacitance and high RF output conductance are the main reasons for the degraded RF performance.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Helmholtz - Nanofacility (HNF)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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