%0 Journal Article
%A Keqi, A.
%A Gehlmann, M.
%A Conti, G.
%A Nemsak, Slavomir
%A Rattanachata, A.
%A Minár, J.
%A Plucinski, L.
%A Rault, J. E.
%A Rueff, J. P.
%A Scarpulla, M.
%A Hategan, M.
%A Pálsson, G. K.
%A Conlon, C.
%A Eiteneer, D.
%A Saw, A. Y.
%A Gray, A. X.
%A Kobayashi, K.
%A Ueda, S.
%A Dubon, O. D.
%A Schneider, C. M.
%A Fadley, C. S.
%T Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
%J Physical review / B
%V 97
%N 15
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2019-00557
%P 155149
%D 2018
%X We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000430545100003
%R 10.1103/PhysRevB.97.155149
%U https://juser.fz-juelich.de/record/859720