Journal Article

FZJ-2019-00557

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Keqi, A. ; Gehlmann, M. ; Conti, G. ; Nemsak, S. (Corresponding author)FZJ* ; Rattanachata, A. ; Minár, J. ; Plucinski, L.FZJ* ; Rault, J. E. ; Rueff, J. P. ; Scarpulla, M. ; Hategan, M. ; Pálsson, G. K. ; Conlon, C. ; Eiteneer, D. ; Saw, A. Y. ; Gray, A. X. ; Kobayashi, K. ; Ueda, S. ; Dubon, O. D. ; Schneider, C. M.FZJ* ; Fadley, C. S.

2018
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/21333  doi:10.1103/PhysRevB.97.155149

Abstract: We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2018

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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