000859720 001__ 859720
000859720 005__ 20230426083204.0
000859720 0247_ $$2doi$$a10.1103/PhysRevB.97.155149
000859720 0247_ $$2ISSN$$a0163-1829
000859720 0247_ $$2ISSN$$a0556-2805
000859720 0247_ $$2ISSN$$a1050-2947
000859720 0247_ $$2ISSN$$a1094-1622
000859720 0247_ $$2ISSN$$a1095-3795
000859720 0247_ $$2ISSN$$a1098-0121
000859720 0247_ $$2ISSN$$a1538-4489
000859720 0247_ $$2ISSN$$a1550-235X
000859720 0247_ $$2ISSN$$a2469-9950
000859720 0247_ $$2ISSN$$a2469-9969
000859720 0247_ $$2Handle$$a2128/21333
000859720 0247_ $$2WOS$$aWOS:000430545100003
000859720 0247_ $$2altmetric$$aaltmetric:31742918
000859720 037__ $$aFZJ-2019-00557
000859720 082__ $$a530
000859720 1001_ $$0P:(DE-HGF)0$$aKeqi, A.$$b0
000859720 245__ $$aElectronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
000859720 260__ $$aWoodbury, NY$$bInst.$$c2018
000859720 3367_ $$2DRIVER$$aarticle
000859720 3367_ $$2DataCite$$aOutput Types/Journal article
000859720 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1548141842_15660
000859720 3367_ $$2BibTeX$$aARTICLE
000859720 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000859720 3367_ $$00$$2EndNote$$aJournal Article
000859720 520__ $$aWe have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
000859720 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000859720 542__ $$2Crossref$$i2018-04-23$$uhttps://link.aps.org/licenses/aps-default-license
000859720 542__ $$2Crossref$$i2019-04-23$$uhttps://link.aps.org/licenses/aps-default-accepted-manuscript-license
000859720 588__ $$aDataset connected to CrossRef
000859720 7001_ $$0P:(DE-Juel1)161368$$aGehlmann, M.$$b1
000859720 7001_ $$0P:(DE-HGF)0$$aConti, G.$$b2
000859720 7001_ $$0P:(DE-Juel1)164137$$aNemsak, Slavomir$$b3$$eCorresponding author$$ufzj
000859720 7001_ $$0P:(DE-HGF)0$$aRattanachata, A.$$b4
000859720 7001_ $$0P:(DE-HGF)0$$aMinár, J.$$b5
000859720 7001_ $$0P:(DE-Juel1)130895$$aPlucinski, L.$$b6$$ufzj
000859720 7001_ $$0P:(DE-HGF)0$$aRault, J. E.$$b7
000859720 7001_ $$0P:(DE-HGF)0$$aRueff, J. P.$$b8
000859720 7001_ $$0P:(DE-HGF)0$$aScarpulla, M.$$b9
000859720 7001_ $$0P:(DE-HGF)0$$aHategan, M.$$b10
000859720 7001_ $$0P:(DE-HGF)0$$aPálsson, G. K.$$b11
000859720 7001_ $$0P:(DE-HGF)0$$aConlon, C.$$b12
000859720 7001_ $$0P:(DE-HGF)0$$aEiteneer, D.$$b13
000859720 7001_ $$0P:(DE-HGF)0$$aSaw, A. Y.$$b14
000859720 7001_ $$0P:(DE-HGF)0$$aGray, A. X.$$b15
000859720 7001_ $$0P:(DE-HGF)0$$aKobayashi, K.$$b16
000859720 7001_ $$0P:(DE-HGF)0$$aUeda, S.$$b17
000859720 7001_ $$0P:(DE-HGF)0$$aDubon, O. D.$$b18
000859720 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b19$$ufzj
000859720 7001_ $$0P:(DE-HGF)0$$aFadley, C. S.$$b20
000859720 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.97.155149$$bAmerican Physical Society (APS)$$d2018-04-23$$n15$$p155149$$tPhysical Review B$$v97$$x2469-9950$$y2018
000859720 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.97.155149$$gVol. 97, no. 15, p. 155149$$n15$$p155149$$tPhysical review / B$$v97$$x2469-9950$$y2018
000859720 8564_ $$uhttps://juser.fz-juelich.de/record/859720/files/PhysRevB.97.155149.pdf$$yOpenAccess
000859720 8564_ $$uhttps://juser.fz-juelich.de/record/859720/files/PhysRevB.97.155149.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000859720 909CO $$ooai:juser.fz-juelich.de:859720$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000859720 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164137$$aForschungszentrum Jülich$$b3$$kFZJ
000859720 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130895$$aForschungszentrum Jülich$$b6$$kFZJ
000859720 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130948$$aForschungszentrum Jülich$$b19$$kFZJ
000859720 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000859720 9141_ $$y2018
000859720 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000859720 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000859720 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Agreement
000859720 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bPHYS REV B : 2017
000859720 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000859720 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000859720 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000859720 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000859720 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000859720 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000859720 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000859720 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000859720 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000859720 920__ $$lyes
000859720 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000859720 980__ $$ajournal
000859720 980__ $$aVDB
000859720 980__ $$aUNRESTRICTED
000859720 980__ $$aI:(DE-Juel1)PGI-6-20110106
000859720 9801_ $$aFullTexts
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.118061
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1126/science.281.5379.951
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/RevModPhys.82.1633
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/RevModPhys.86.187
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1126/science.287.5455.1019
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/nmat2898
000859720 999C5 $$1K. Sato$$2Crossref$$oK. Sato 2005$$y2005
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/nmat3450
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/ncomms3645
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.89.205204
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.nima.2005.05.009
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.nima.2005.05.016
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/nmat3089
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.2219713
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/nmat1509
000859720 999C5 $$1P. Stone$$2Crossref$$oP. Stone Handbook of Semiconductor Spintronics 2010$$tHandbook of Semiconductor Spintronics$$y2010
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.3535957
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.65.201303
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1002/sia.3522
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1080/00018738300101521
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/RevModPhys.75.473
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1107/S160057751402102X
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.elspec.2013.01.009
000859720 999C5 $$1S. Ueda$$2Crossref$$oS. Ueda 10th International Conference on Radiation Instrumentation SRI 2009 2010$$t10th International Conference on Radiation Instrumentation SRI 2009$$y2010
000859720 999C5 $$1P. Blaha$$2Crossref$$oP. Blaha WIEN2k, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties 2001$$tWIEN2k, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties$$y2001
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.77.3865
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1088/0034-4885/74/9/096501
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.82.024411
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.elspec.2012.10.003
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1088/1367-2630/16/1/015005
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1002/sia.2097
000859720 999C5 $$2Crossref$$oGroup IV Elements, IV-IV and III-V Compounds. Part b—Electronic, Transport, Optical and Other Properties 2002$$tGroup IV Elements, IV-IV and III-V Compounds. Part b—Electronic, Transport, Optical and Other Properties$$y2002
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.75.014422
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.111.097201
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1038/srep33184
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevA.2.1109
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.65.113102
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1107/S010876738300001X
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1080/08940886.2012.720165
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.elspec.2016.04.008
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.78.035108
000859720 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.97.227601