TY  - JOUR
AU  - Keqi, A.
AU  - Gehlmann, M.
AU  - Conti, G.
AU  - Nemsak, Slavomir
AU  - Rattanachata, A.
AU  - Minár, J.
AU  - Plucinski, L.
AU  - Rault, J. E.
AU  - Rueff, J. P.
AU  - Scarpulla, M.
AU  - Hategan, M.
AU  - Pálsson, G. K.
AU  - Conlon, C.
AU  - Eiteneer, D.
AU  - Saw, A. Y.
AU  - Gray, A. X.
AU  - Kobayashi, K.
AU  - Ueda, S.
AU  - Dubon, O. D.
AU  - Schneider, C. M.
AU  - Fadley, C. S.
TI  - Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
JO  - Physical review / B
VL  - 97
IS  - 15
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2019-00557
SP  - 155149
PY  - 2018
AB  - We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000430545100003
DO  - DOI:10.1103/PhysRevB.97.155149
UR  - https://juser.fz-juelich.de/record/859720
ER  -