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@ARTICLE{Keqi:859720,
      author       = {Keqi, A. and Gehlmann, M. and Conti, G. and Nemsak,
                      Slavomir and Rattanachata, A. and Minár, J. and Plucinski,
                      L. and Rault, J. E. and Rueff, J. P. and Scarpulla, M. and
                      Hategan, M. and Pálsson, G. K. and Conlon, C. and Eiteneer,
                      D. and Saw, A. Y. and Gray, A. X. and Kobayashi, K. and
                      Ueda, S. and Dubon, O. D. and Schneider, C. M. and Fadley,
                      C. S.},
      title        = {{E}lectronic structure of the dilute magnetic semiconductor
                      {G} a 1 − x {M} n x {P} from hard x-ray photoelectron
                      spectroscopy and angle-resolved photoemission},
      journal      = {Physical review / B},
      volume       = {97},
      number       = {15},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-00557},
      pages        = {155149},
      year         = {2018},
      abstract     = {We have investigated the electronic structure of the dilute
                      magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it
                      to that of an undoped GaP reference sample, using hard x-ray
                      photoelectron spectroscopy (HXPS) and hard x-ray
                      angle-resolved photoemission spectroscopy (HARPES) at
                      energies of about 3 keV. We present experimental data, as
                      well as theoretical calculations, to understand the role of
                      the Mn dopant in the emergence of ferromagnetism in this
                      material. Both core-level spectra and angle-resolved or
                      angle-integrated valence spectra are discussed. In
                      particular, the HARPES experimental data are compared to
                      free-electron final-state model calculations and to more
                      accurate one-step photoemission theory. The experimental
                      results show differences between Ga0.98Mn0.02P and GaP in
                      both angle-resolved and angle-integrated valence spectra.
                      The Ga0.98Mn0.02P bands are broadened due to the presence of
                      Mn impurities that disturb the long-range translational
                      order of the host GaP crystal. Mn-induced changes of the
                      electronic structure are observed over the entire valence
                      band range, including the presence of a distinct impurity
                      band close to the valence-band maximum of the DMS. These
                      experimental results are in good agreement with the one-step
                      photoemission calculations and a prior HARPES study of
                      Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957
                      (2012)], demonstrating the strong similarity between these
                      two materials. The Mn 2p and 3s core-level spectra also
                      reveal an essentially identical state in doping both GaAs
                      and GaP.},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000430545100003},
      doi          = {10.1103/PhysRevB.97.155149},
      url          = {https://juser.fz-juelich.de/record/859720},
}