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| 001 | 859720 | ||
| 005 | 20230426083204.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.97.155149 |2 doi |
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| 024 | 7 | _ | |a 1538-4489 |2 ISSN |
| 024 | 7 | _ | |a 1550-235X |2 ISSN |
| 024 | 7 | _ | |a 2469-9950 |2 ISSN |
| 024 | 7 | _ | |a 2469-9969 |2 ISSN |
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| 245 | _ | _ | |a Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission |
| 260 | _ | _ | |a Woodbury, NY |c 2018 |b Inst. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1548141842_15660 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. |
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| 542 | _ | _ | |i 2018-04-23 |2 Crossref |u https://link.aps.org/licenses/aps-default-license |
| 542 | _ | _ | |i 2019-04-23 |2 Crossref |u https://link.aps.org/licenses/aps-default-accepted-manuscript-license |
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| 700 | 1 | _ | |a Nemsak, Slavomir |0 P:(DE-Juel1)164137 |b 3 |e Corresponding author |u fzj |
| 700 | 1 | _ | |a Rattanachata, A. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Minár, J. |0 P:(DE-HGF)0 |b 5 |
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| 700 | 1 | _ | |a Rault, J. E. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Rueff, J. P. |0 P:(DE-HGF)0 |b 8 |
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| 773 | _ | _ | |a 10.1103/PhysRevB.97.155149 |g Vol. 97, no. 15, p. 155149 |0 PERI:(DE-600)2844160-6 |n 15 |p 155149 |t Physical review / B |v 97 |y 2018 |x 2469-9950 |
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