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@INPROCEEDINGS{Kindsmller:860100,
      author       = {Kindsmüller, A. and Schönhals, A. and Menzel, Stephan and
                      Dittmann, Regina and Waser, R. and Wouters, D. J.},
      title        = {{T}he influence of interfacial (sub)oxide layers on the
                      properties of pristine resistive switching devices},
      reportid     = {FZJ-2019-00886},
      year         = {2018},
      month         = {Oct},
      date          = {2018-10-22},
      organization  = {2018 Non-Volatile Memory Technology
                       Symposium, Sendai (Japan), 22 Oct 2018
                       - 24 Oct 2018},
      subtyp        = {Other},
      cin          = {JARA-FIT / PGI-7},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/860100},
}