TY  - JOUR
AU  - Abbaspour, Elhameh
AU  - Menzel, Stephan
AU  - Hardtdegen, Alexander
AU  - Hoffmann-Eifert, Susanne
AU  - Jungemann, Christoph
TI  - KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
JO  - IEEE transactions on nanotechnology
VL  - 17
IS  - 6
SN  - 1941-0085
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2019-00888
SP  - 1181 - 1188
PY  - 2018
AB  - This paper presents a physical model to investigate the electroforming, set and reset processes in Redox-based resistive switching RAM based on the valence change mechanism. The model uses a kinetic Monte Carlo code in a three-dimensional structure. It is based on the formation and dissolution of an oxygen-deficient/oxygen-vacancy-rich filament in the resistive switching oxide material. In contrast to other proposed models, oxygen vacancies only form at the anode/oxide boundary due to an oxygen exchange reaction. The generated oxygen vacancies are mobile and move away from the interface allowing for further oxygen vacancy generation. The model includes electric field, temperature and temperature gradient as driving forces for the electroforming, set and reset transition of these devices. It is demonstrated that this alternative model could successfully reproduce I−V characteristics observed in experimental results.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000449979300017
DO  - DOI:10.1109/TNANO.2018.2867904
UR  - https://juser.fz-juelich.de/record/860102
ER  -