Journal Article

FZJ-2019-00888

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices

Abbaspour, E. ; Menzel, S.FZJ* ; Hardtdegen, A.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Jungemann, C.

2018
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TNANO.2018.2867904

Abstract: This paper presents a physical model to investigate the electroforming, set and reset processes in Redox-based resistive switching RAM based on the valence change mechanism. The model uses a kinetic Monte Carlo code in a three-dimensional structure. It is based on the formation and dissolution of an oxygen-deficient/oxygen-vacancy-rich filament in the resistive switching oxide material. In contrast to other proposed models, oxygen vacancies only form at the anode/oxide boundary due to an oxygen exchange reaction. The generated oxygen vacancies are mobile and move away from the interface allowing for further oxygen vacancy generation. The model includes electric field, temperature and temperature gradient as driving forces for the electroforming, set and reset transition of these devices. It is demonstrated that this alternative model could successfully reproduce I−V characteristics observed in experimental results.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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