Home > Publications database > KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices > print |
001 | 860102 | ||
005 | 20210130000440.0 | ||
024 | 7 | _ | |a 10.1109/TNANO.2018.2867904 |2 doi |
024 | 7 | _ | |a 1536-125X |2 ISSN |
024 | 7 | _ | |a 1941-0085 |2 ISSN |
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100 | 1 | _ | |a Abbaspour, Elhameh |0 0000-0002-3704-8150 |b 0 |
245 | _ | _ | |a KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices |
260 | _ | _ | |a New York, NY |c 2018 |b IEEE |
336 | 7 | _ | |a article |2 DRIVER |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1548767788_11949 |2 PUB:(DE-HGF) |
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336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
520 | _ | _ | |a This paper presents a physical model to investigate the electroforming, set and reset processes in Redox-based resistive switching RAM based on the valence change mechanism. The model uses a kinetic Monte Carlo code in a three-dimensional structure. It is based on the formation and dissolution of an oxygen-deficient/oxygen-vacancy-rich filament in the resistive switching oxide material. In contrast to other proposed models, oxygen vacancies only form at the anode/oxide boundary due to an oxygen exchange reaction. The generated oxygen vacancies are mobile and move away from the interface allowing for further oxygen vacancy generation. The model includes electric field, temperature and temperature gradient as driving forces for the electroforming, set and reset transition of these devices. It is demonstrated that this alternative model could successfully reproduce I−V characteristics observed in experimental results. |
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700 | 1 | _ | |a Menzel, Stephan |0 P:(DE-Juel1)158062 |b 1 |
700 | 1 | _ | |a Hardtdegen, Alexander |0 P:(DE-Juel1)165704 |b 2 |
700 | 1 | _ | |a Hoffmann-Eifert, Susanne |0 P:(DE-Juel1)130717 |b 3 |
700 | 1 | _ | |a Jungemann, Christoph |0 P:(DE-HGF)0 |b 4 |
773 | _ | _ | |a 10.1109/TNANO.2018.2867904 |g Vol. 17, no. 6, p. 1181 - 1188 |0 PERI:(DE-600)2082654-0 |n 6 |p 1181 - 1188 |t IEEE transactions on nanotechnology |v 17 |y 2018 |x 1941-0085 |
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