000860293 001__ 860293
000860293 005__ 20210130000505.0
000860293 0247_ $$2doi$$a10.1002/admi.201700972
000860293 0247_ $$2WOS$$aWOS:000423173800007
000860293 037__ $$aFZJ-2019-01068
000860293 082__ $$a600
000860293 1001_ $$00000-0002-9065-597X$$aLi, Chao$$b0$$eCorresponding author
000860293 245__ $$aA Novel Multiple Interface Structure with the Segregation of Dopants in Lead-Free Ferroelectric (K 0.5 Na 0.5 )NbO 3 Thin Films
000860293 260__ $$aWeinheim$$bWiley-VCH$$c2018
000860293 3367_ $$2DRIVER$$aarticle
000860293 3367_ $$2DataCite$$aOutput Types/Journal article
000860293 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1548946011_21932
000860293 3367_ $$2BibTeX$$aARTICLE
000860293 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000860293 3367_ $$00$$2EndNote$$aJournal Article
000860293 520__ $$aInterfaces in oxides are found to possess different properties and can be engineered for modifying local structure and properties of nearby area. In this work, it is reported that the interfaces can be formed in Ba/Zr (BZ)‐doped (K,Na)NbO3 (KNN) thin films by cycles of chemical solution deposition using same precursor solution. In the films, a novel and special cross‐sectional structure is observed with periodic distribution of Ba‐rich and Zr‐rich layers. The Ba‐rich and Zr‐rich layers exhibit different strain, lattice parameters, and crystal structure, leading to an obvious effect on the general ferroelectric properties of the KNN‐based thin films. Moreover, the self‐polarization is also observed, which can be understood to originate from the formed built‐in field by layered distribution of Ba and Zr in the KNN‐BZ thin films.
000860293 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000860293 588__ $$aDataset connected to CrossRef
000860293 7001_ $$0P:(DE-HGF)0$$aWang, Lingyan$$b1
000860293 7001_ $$0P:(DE-Juel1)159443$$aChen, Wen$$b2
000860293 7001_ $$0P:(DE-Juel1)161232$$aLu, Lu$$b3
000860293 7001_ $$0P:(DE-HGF)0$$aNan, Hu$$b4
000860293 7001_ $$0P:(DE-HGF)0$$aWang, Dawei$$b5
000860293 7001_ $$0P:(DE-HGF)0$$aZhang, Yijun$$b6
000860293 7001_ $$0P:(DE-HGF)0$$aYang, Yaodong$$b7
000860293 7001_ $$0P:(DE-Juel1)130736$$aJia, Chun-Lin$$b8
000860293 773__ $$0PERI:(DE-600)2750376-8$$a10.1002/admi.201700972$$gVol. 5, no. 2, p. 1700972 -$$n2$$p1700972 -$$tAdvanced materials interfaces$$v5$$x2196-7350$$y2018
000860293 8564_ $$uhttps://juser.fz-juelich.de/record/860293/files/Li_et_al-2018-Advanced_Materials_Interfaces.pdf$$yRestricted
000860293 8564_ $$uhttps://juser.fz-juelich.de/record/860293/files/Li_et_al-2018-Advanced_Materials_Interfaces.pdf?subformat=pdfa$$xpdfa$$yRestricted
000860293 909CO $$ooai:juser.fz-juelich.de:860293$$pVDB
000860293 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130736$$aForschungszentrum Jülich$$b8$$kFZJ
000860293 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000860293 9141_ $$y2018
000860293 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bADV MATER INTERFACES : 2017
000860293 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000860293 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000860293 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000860293 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000860293 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000860293 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000860293 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000860293 920__ $$lyes
000860293 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x0
000860293 980__ $$ajournal
000860293 980__ $$aVDB
000860293 980__ $$aI:(DE-Juel1)ER-C-1-20170209
000860293 980__ $$aUNRESTRICTED