TY  - JOUR
AU  - Li, Chao
AU  - Wang, Lingyan
AU  - Chen, Wen
AU  - Lu, Lu
AU  - Nan, Hu
AU  - Wang, Dawei
AU  - Zhang, Yijun
AU  - Yang, Yaodong
AU  - Jia, Chun-Lin
TI  - A Novel Multiple Interface Structure with the Segregation of Dopants in Lead-Free Ferroelectric (K 0.5 Na 0.5 )NbO 3 Thin Films
JO  - Advanced materials interfaces
VL  - 5
IS  - 2
SN  - 2196-7350
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2019-01068
SP  - 1700972 -
PY  - 2018
AB  - Interfaces in oxides are found to possess different properties and can be engineered for modifying local structure and properties of nearby area. In this work, it is reported that the interfaces can be formed in Ba/Zr (BZ)‐doped (K,Na)NbO3 (KNN) thin films by cycles of chemical solution deposition using same precursor solution. In the films, a novel and special cross‐sectional structure is observed with periodic distribution of Ba‐rich and Zr‐rich layers. The Ba‐rich and Zr‐rich layers exhibit different strain, lattice parameters, and crystal structure, leading to an obvious effect on the general ferroelectric properties of the KNN‐based thin films. Moreover, the self‐polarization is also observed, which can be understood to originate from the formed built‐in field by layered distribution of Ba and Zr in the KNN‐BZ thin films.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000423173800007
DO  - DOI:10.1002/admi.201700972
UR  - https://juser.fz-juelich.de/record/860293
ER  -