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@ARTICLE{Kutovyi:861295,
      author       = {Kutovyi, Yurii and Zadorozhnyi, Ihor and Handziuk,
                      Volodymyr and Hlukhova, Hanna and Boichuk, Nazarii and
                      Petrychuk, Mykhaylo and Vitusevich, Svetlana},
      title        = {{T}emperature-{D}ependent {N}oise and {T}ransport in
                      {S}ilicon {T}wo-{L}ayer {N}anowire {FET}s},
      journal      = {Physica status solidi / B Basic research B},
      volume       = {256},
      number       = {3},
      issn         = {0370-1972},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-01792},
      pages        = {1800636},
      year         = {2019},
      abstract     = {Silicon two‐layer (TL) nanowire (NW) field‐effect
                      transistors (FETs) are fabricated by applying a
                      CMOS‐compatible top‐down approach to silicon on
                      insulator (SOI) wafers with additionally epitaxially grown
                      silicon layers. Transport and noise properties of fabricated
                      structures with p‐type conductivity are studied in a wide
                      temperature range (100–300 K). A random telegraph signal
                      (RTS) noise as a special case of trapping‐detrapping
                      processes is registered as a dominant noise component at
                      room temperature. A shift of the characteristic corner
                      (rollover) frequency of the RTS noise to lower frequencies
                      with temperature decreasing is observed. By performing
                      analysis of temperature‐dependent low‐frequency noise,
                      the activation energy and hole capture cross section of a
                      single trap responsible for the RTS noise are estimated to
                      be (0.29 ± 0.02 eV) and (2.22 ± 0.15)
                      ×10−18 cm2, respectively. Obtained values suggest that
                      the trap can be attributed to a vacancy‐boron complex. At
                      the temperature below 200 K fabricated devices demonstrate
                      a clear generation‐recombination noise with power spectral
                      density proportional to 1/f 3/2. Such noise behavior
                      provides the evidence of diffusion‐assisted processes in
                      two‐layer nanowire structures. This confirms the
                      contribution of high‐doped top silicon layer to the
                      transistor transport properties.},
      cin          = {ICS-8},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ICS-8-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000473612400023},
      doi          = {10.1002/pssb.201800636},
      url          = {https://juser.fz-juelich.de/record/861295},
}