Journal Article

FZJ-2019-01792

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Temperature-Dependent Noise and Transport in Silicon Two-Layer Nanowire FETs

Kutovyi, Y.FZJ* ; Zadorozhnyi, I.FZJ* ; Handziuk, V.FZJ* ; Hlukhova, H.FZJ* ; Boichuk, N.FZJ* ; Petrychuk, M. ; Vitusevich, S. (Corresponding author)FZJ*

2019
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssb.201800636

Abstract: Silicon two‐layer (TL) nanowire (NW) field‐effect transistors (FETs) are fabricated by applying a CMOS‐compatible top‐down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p‐type conductivity are studied in a wide temperature range (100–300 K). A random telegraph signal (RTS) noise as a special case of trapping‐detrapping processes is registered as a dominant noise component at room temperature. A shift of the characteristic corner (rollover) frequency of the RTS noise to lower frequencies with temperature decreasing is observed. By performing analysis of temperature‐dependent low‐frequency noise, the activation energy and hole capture cross section of a single trap responsible for the RTS noise are estimated to be (0.29 ± 0.02 eV) and (2.22 ± 0.15) ×10−18 cm2, respectively. Obtained values suggest that the trap can be attributed to a vacancy‐boron complex. At the temperature below 200 K fabricated devices demonstrate a clear generation‐recombination noise with power spectral density proportional to 1/f 3/2. Such noise behavior provides the evidence of diffusion‐assisted processes in two‐layer nanowire structures. This confirms the contribution of high‐doped top silicon layer to the transistor transport properties.

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Contributing Institute(s):

1. Bioelektronik (ICS-8)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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