TY  - JOUR
AU  - Hollmann, Arne
AU  - Jirovec, Daniel
AU  - Kucharski, Maciej
AU  - Kissinger, Dietmar
AU  - Fischer, Gunter
AU  - Schreiber, Lars
TI  - 30 GHz-voltage controlled oscillator operating at 4 K
JO  - Review of scientific instruments
VL  - 89
IS  - 11
SN  - 1089-7623
CY  - [S.l.]
PB  - American Institute of Physics
M1  - FZJ-2019-02009
SP  - 114701 -
PY  - 2018
AB  - Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field.
LB  - PUB:(DE-HGF)16
C6  - pmid:30501331
UR  - <Go to ISI:>//WOS:000451735700054
DO  - DOI:10.1063/1.5038258
UR  - https://juser.fz-juelich.de/record/861558
ER  -