30 GHz-voltage controlled oscillator operating at 4 K

Hollmann, Arne; Kissinger, Dietmar; Jirovec, Daniel; Schreiber, Lars; Kucharski, Maciej; Fischer, Gunter

doi:10.1063/1.5038258

Journal Article

FZJ-2019-02009

30 GHz-voltage controlled oscillator operating at 4 K

Hollmann, A. ; Jirovec, D. ; Kucharski, M. ; Kissinger, D. ; Fischer, G. ; Schreiber, L. (Corresponding author)FZJ*

2018
American Institute of Physics [S.l.]

Review of scientific instruments 89(11), 114701 - (2018) [10.1063/1.5038258]

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Please use a persistent id in citations: http://hdl.handle.net/2128/21887 doi:10.1063/1.5038258

Abstract: Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field.

Classification:

ddc:620

Contributing Institute(s):

Research Program(s):

144 - Controlling Collective States (POF3-144) (POF3-144)

Appears in the scientific report 2019

Database coverage:
Medline

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