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@ARTICLE{Hollmann:861558,
      author       = {Hollmann, Arne and Jirovec, Daniel and Kucharski, Maciej
                      and Kissinger, Dietmar and Fischer, Gunter and Schreiber,
                      Lars},
      title        = {30 {GH}z-voltage controlled oscillator operating at 4 {K}},
      journal      = {Review of scientific instruments},
      volume       = {89},
      number       = {11},
      issn         = {1089-7623},
      address      = {[S.l.]},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2019-02009},
      pages        = {114701 -},
      year         = {2018},
      abstract     = {Solid-state qubit manipulation and read-out fidelities are
                      reaching fault-tolerance, but quantum error correction
                      requires millions of physical qubits and therefore a
                      scalable quantum computer architecture. To solve signal-line
                      bandwidth and fan-out problems, microwave sources required
                      for qubit manipulation might be embedded close to the qubit
                      chip, typically operating at temperatures below 4 K. Here,
                      we perform the first low temperature measurements of a 130
                      nm BiCMOS based SiGe voltage controlled oscillator at
                      cryogenic temperature. We determined the frequency and
                      output power dependence on temperature and magnetic field up
                      to 5 T and measured the temperature influence on its noise
                      performance. The device maintains its full functionality
                      from 300 K to 4 K. The carrier frequency at 4 K increases by
                      $3\%$ with respect to the carrier frequency at 300 K, and
                      the output power at 4 K increases by 10 dB relative to the
                      output power at 300 K. The frequency tuning range of
                      approximately $20\%$ remains unchanged between 300 K and 4
                      K. In an in-plane magnetic field of 5 T, the carrier
                      frequency shifts by only $0.02\%$ compared to the frequency
                      at zero magnetic field.},
      cin          = {PGI-11 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-11-20170113 / $I:(DE-82)080009_20140620$},
      pnm          = {144 - Controlling Collective States (POF3-144)},
      pid          = {G:(DE-HGF)POF3-144},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30501331},
      UT           = {WOS:000451735700054},
      doi          = {10.1063/1.5038258},
      url          = {https://juser.fz-juelich.de/record/861558},
}